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Controlled synthesis of Si nanowires and heterostructures


Project description

The aim of the project is the controlled growth of Si nanowires and the growth of Si/Ge based heterostructures. In the first part of the project a deeper understanding of the nanowire growth mechanism will be developed for vapor-liquid-solid growth in combination with the SiO assisted process, as well as for the pulsed laser deposition of nanowire and nanowire heterostructures. Early stages of the nanowire growth near to the substrate surface will be studied and the influence of different substrate orientations and substrate preparations will be shown. The nanowires and nanowire heterostructures will be analyzed in terms of interface quality, defects, abruptness, and optical and electrical properties. The conditions for controlled growth of Si nanowires will be investigated to achieve growth perpendicular to the substrate and to design heterostructures. After obtaining a better understanding of the wire growth mechanism, we will develop methods for selective growth of nanowires at specific positions by using different template approaches. The influence of the template on the nanowire growth as well as possible chemical reactions involved will be investigated. This work will be based on a number of cooperations within MPI Halle and the DFG Focus Program. In summary, the overall goal is the growth of the nanowires at a desired position with specific length and diameter, and the investigation and optimization of their structural, optical and electrical properties.

Start/End of project

01.04.2004 until 31.03.2006

Project manager

Zacharias M

Contact person

Zacharias M


DFG Priority Program 1165


Nano, Nanotechnology, Materials, Nanomaterials, Nanostructures, Nanowires, Silicon, Growth Mechanism, Properties
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